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PD - 97359
IRFH5053PbF
Applications
l l
HEXFET(R) Power MOSFET
3 Phase Boost Converter Applications Secondary Side Synchronous Rectification
VDSS 100V
RDS(on) max 18m@VGS = 10V
Qg 24nC
Benefits
l l l l l l l l
Very low RDS(ON) at 10V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering
D D D D
S S S G
PQFN
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
100 20 9.3 7.4 46 75 3.1 2.0 0.025 -55 to + 150
Units
V
A
g Power Dissipation g
Power Dissipation
c
W W/C C
Linear Derating Factor Operating Junction and
g
Storage Temperature Range
Thermal Resistance
Parameter
RJC RJA Junction-to-Case
f
Typ.
--- ---
Max.
1.6 40
Units
C/W
Junction-to-Ambient
g
Notes through are on page 9
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12/16/08
1
IRFH5053PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current
Min. Typ. Max. Units
100 --- --- 3.0 --- --- --- --- --- 19 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.11 14.4 3.7 -11 --- --- --- --- --- 24 5.2 1.5 8.6 8.7 10.1 12 0.8 12 7.5 18 4.1 1510 230 59 --- --- 18 4.9 --- 20 250 100 -100 --- 36 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- pF V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 9.3A V VDS = VGS, ID = 100A mV/C A nA S
e
VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 50V, ID = 7.4A VDS = 50V VGS = 10V ID = 7.4A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 50V, VGS = 10V
nC
nC ns
ID = 7.4A RG=1.8 See Fig.15 VGS = 0V VDS = 50V = 1.0MHz Max. 21 7.4 Units mJ A
Avalanche Characteristics
EAS IAR
d
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 31 210 2.8 A 75 1.3 47 320 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
S p-n junction diode. TJ = 25C, IS = 7.4A, VGS = 0V
TJ = 25C, IF = 7.4A, VDD = 50V di/dt = 800A/s Fig.16
e
eASee
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH5053PbF
100
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V
100
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
1
0.1 4.5V 0.01 0.1 1
60s PULSE WIDTH
Tj = 25C 10 0.1 100 1000 0.1
4.5V
60s PULSE WIDTH
Tj = 150C 10 100 1000
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.5 ID = 9.3A VGS = 10V 2.0
ID, Drain-to-Source Current (A)
10
T J = 150C
1.5
1
T J = 25C
1.0
VDS = 50V 60s PULSE WIDTH 0.1 3 4 5 6 7
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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3
IRFH5053PbF
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
14.0 ID= 7.4A
VGS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
10000
C, Capacitance (pF)
VDS= 80V VDS= 50V
1000
Coss Crss
Ciss
100
10 1 10 VDS, Drain-to-Source Voltage (V) 100
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
100
1000 T A = 25C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA Tj = 150C LIMITED BY R DS(on) Single Pulse 100sec
10
TJ = 150C
100 1msec 10 10msec DC 1
1
T J = 25C
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 0.1 0.01 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFH5053PbF
10
VGS(th) , Gate Threshold Voltage (V)
4.5
8
ID, Drain Current (A)
4.0
6
3.5 ID = 100A 3.0
4
2
2.5
0 25 50 75 100 125 150 T A , Ambient Temperature (C)
2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA ) C/W
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01
J J 1 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 A 2 3 4 4 A
Ri (C/W)
1.3862 3.6808 18.148 16.804
0.000201 0.013839 0.993400 37.6
i (sec)
Ci= i/Ri Ci= i/Ri
0.1 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 10 100 1000
0.01 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFH5053PbF
RDS(on), Drain-to -Source On Resistance (m )
50
EAS , Single Pulse Avalanche Energy (mJ)
90
ID = 9.3A 40
80 70 60 50 40 30 20 10 0
ID TOP 1.5A 1.9A BOTTOM 7.4A
30
T J = 125C
20 T J = 25C 10 4 6 8 10 12 14 16
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
V DS V GS
RD
VDS
L
DRIVER
RG V10V GS Pulse Width 1 s Duty Factor 0.1
D.U.T.
+
-V DD
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 15a. Switching Time Test Circuit
90%
VDS
10%
VGS
I AS
td(on)
tr
td(off)
tf
Fig 14b. Unclamped Inductive Waveforms
Fig 15b. Switching Time Waveforms
6
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IRFH5053PbF
D.U.T
Driver Gate Drive Period D= P.W. Period VGS=10V
+
P.W.
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Current Regulator Same Type as D.U.T.
Vds Vgs
Id
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Test Circuit
Fig 18. Gate Charge Waveform
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7
IRFH5053PbF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL RECTIFIER LOGO 6
DATE CODE
XXXX
ASSEMBLY SITE CODE (Per SCOP 200-002)
PART NUMBER MARKING CODE
(Per Marking Spec.)
XYWWX XXXXX
PIN 1 IDENTIFIER LOT CODE
(Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFH5053PbF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.75mH, RG = 25, IAS = 7.4A. Pulse width 400s; duty cycle 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/08
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